Review



carbon nanotube field-effect transistors  (Multigate Medical Products Pty Ltd)

 
  • Logo
  • About
  • News
  • Press Release
  • Team
  • Advisors
  • Partners
  • Contact
  • Bioz Stars
  • Bioz vStars
    • 90
      Buy from Supplier

    Structured Review

    Multigate Medical Products Pty Ltd carbon nanotube field-effect transistors
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistors, supplied by Multigate Medical Products Pty Ltd, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+field+effect+transistors/pmc08747695-87-17-3
    Average 90 stars, based on 1 article reviews
    carbon nanotube field-effect transistors - by Bioz Stars, 2026-09
    90/100 stars

    Images

    1) Product Images from "Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell"

    Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

    Journal: Sensors (Basel, Switzerland)

    doi: 10.3390/s22010033

    Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.
    Figure Legend Snippet: Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.

    Techniques Used:

    Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.
    Figure Legend Snippet: Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.

    Techniques Used:

    Related Articles

    other:

    Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell
    Article Snippet: Compared to the multigate FinFET and conventional sub-22 nm silicon FET, the gate-all-around technique used in the carbon nanotube field-effect transistors downplays other transistors in terms of power consumption and reliability.



    Similar Products

    carbon nanotube field-effect transistor-based sensors for nanoplastics detection  (ALTANA Inc)
    90
    ALTANA Inc carbon nanotube field-effect transistor-based sensors for nanoplastics detection
    Carbon Nanotube Field Effect Transistor Based Sensors For Nanoplastics Detection, supplied by ALTANA Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+field+effect+transistor+based+sensors+for+nanoplastics+detection/pm40495529-306-35-18
    Average 90 stars, based on 1 article reviews
    carbon nanotube field-effect transistor-based sensors for nanoplastics detection - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    vacuum gate dielectric doping-free carbon nanoribbon/nanotube field-effect transistors  (Nanoelectronics Research Corporation)
    90
    Nanoelectronics Research Corporation vacuum gate dielectric doping-free carbon nanoribbon/nanotube field-effect transistors
    Vacuum Gate Dielectric Doping Free Carbon Nanoribbon/Nanotube Field Effect Transistors, supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/vacuum+gate+dielectric+doping+free+carbon+nanoribbon+nanotube+field+effect+transistors/pm38869587-9-12-22
    Average 90 stars, based on 1 article reviews
    vacuum gate dielectric doping-free carbon nanoribbon/nanotube field-effect transistors - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field-effect transistors  (Multigate Medical Products Pty Ltd)
    90
    Multigate Medical Products Pty Ltd carbon nanotube field-effect transistors
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistors, supplied by Multigate Medical Products Pty Ltd, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+field+effect+transistors/pmc08747695-87-17-3
    Average 90 stars, based on 1 article reviews
    carbon nanotube field-effect transistors - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field effect transistor  (Nanoelectronics Research Corporation)
    90
    Nanoelectronics Research Corporation carbon nanotube field effect transistor
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistor, supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+based+field+effect+transistors/10__1109_slash_access__2020__2982738-24-0-17
    Average 90 stars, based on 1 article reviews
    carbon nanotube field effect transistor - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field effect transistors-based gas sensors  (Nanosensors Inc)
    90
    Nanosensors Inc carbon nanotube field effect transistors-based gas sensors
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistors Based Gas Sensors, supplied by Nanosensors Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+field+effect+transistors+based+gas+sensors/10__1039_slash_d0ra09438b-761-6-15
    Average 90 stars, based on 1 article reviews
    carbon nanotube field effect transistors-based gas sensors - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    single-walled carbon nanotube field-effect transistors  (Steigerwald Arzneimittelwerk GmbH)
    90
    Steigerwald Arzneimittelwerk GmbH single-walled carbon nanotube field-effect transistors
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Single Walled Carbon Nanotube Field Effect Transistors, supplied by Steigerwald Arzneimittelwerk GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/molecular+electronic+devices+based+on+single+walled+carbon+nanotube+electrodes/10__1016_slash_j__molstruc__2019__126962-216-8-0
    Average 90 stars, based on 1 article reviews
    single-walled carbon nanotube field-effect transistors - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field-effect transistor  (Nanoelectronics Research Corporation)
    90
    Nanoelectronics Research Corporation carbon nanotube field-effect transistor
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistor, supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+based+field+effect+transistors/10__1149_slash_1__3493679-3-35-15
    Average 90 stars, based on 1 article reviews
    carbon nanotube field-effect transistor - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field-effect transistor (cnfet)  (Nano Technology Inc)
    90
    Nano Technology Inc carbon nanotube field-effect transistor (cnfet)
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistor (Cnfet), supplied by Nano Technology Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+field+effect+transistor++cnfet+/10__1007_slash_s00034___019___01318___4-8-0-14
    Average 90 stars, based on 1 article reviews
    carbon nanotube field-effect transistor (cnfet) - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube field effect transistor (cnfet)  (Nanoelectronics Research Corporation)
    90
    Nanoelectronics Research Corporation carbon nanotube field effect transistor (cnfet)
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Field Effect Transistor (Cnfet), supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+based+field+effect+transistors/10__1080_slash_00207217__2019__1636306-15-3-1
    Average 90 stars, based on 1 article reviews
    carbon nanotube field effect transistor (cnfet) - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier
    carbon nanotube network field effect transistors  (High Energy Corporation)
    90
    High Energy Corporation carbon nanotube network field effect transistors
    Geometric parameters of the 14-nm <t> carbon nanotube field-effect </t> transistor and FinFET.
    Carbon Nanotube Network Field Effect Transistors, supplied by High Energy Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/carbon+nanotube+field-effect+transistors/carbon+nanotube+network+field+effect+transistors/pm30715831-310-20-27
    Average 90 stars, based on 1 article reviews
    carbon nanotube network field effect transistors - by Bioz Stars, 2026-09
    90/100 stars
    		  Buy from Supplier

    Image Search Results


    Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

    doi: 10.3390/s22010033

    Figure Lengend Snippet: Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.

    Article Snippet: Compared to the multigate FinFET and conventional sub-22 nm silicon FET, the gate-all-around technique used in the carbon nanotube field-effect transistors downplays other transistors in terms of power consumption and reliability.

    Techniques:

    Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell

    doi: 10.3390/s22010033

    Figure Lengend Snippet: Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.

    Article Snippet: Compared to the multigate FinFET and conventional sub-22 nm silicon FET, the gate-all-around technique used in the carbon nanotube field-effect transistors downplays other transistors in terms of power consumption and reliability.

    Techniques: